Information card for entry 4517420
| Formula |
C26 H14 F4 S2 |
| Calculated formula |
C26 H14 F4 S2 |
| SMILES |
s1c(ccc1c1ccccc1)c1c(F)c(F)c(c(F)c1F)c1sc(cc1)c1ccccc1 |
| Title of publication |
Fluorinated Thiophene-Phenylene Co-Oligomers for Optoelectronic Devices. |
| Authors of publication |
Sosorev, Andrey Yu; Trukhanov, Vasiliy A.; Maslennikov, Dmitry R.; Borshchev, Oleg V.; Polyakov, Roman A.; Skorotetcky, Maxim S.; Surin, Nikolay M.; Kazantsev, Maxim S.; Dominskiy, Dmitry I.; Tafeenko, Viktor A.; Ponomarenko, Sergey A.; Paraschuk, Dmitry Yu |
| Journal of publication |
ACS applied materials & interfaces |
| Year of publication |
2020 |
| Journal volume |
12 |
| Journal issue |
8 |
| Pages of publication |
9507 - 9519 |
| a |
43.582 ± 0.001 Å |
| b |
5.8661 ± 0.0001 Å |
| c |
7.7244 ± 0.0002 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
1974.79 ± 0.08 Å3 |
| Cell temperature |
295 ± 2 K |
| Ambient diffraction temperature |
295 K |
| Number of distinct elements |
4 |
| Space group number |
29 |
| Hermann-Mauguin space group symbol |
P c a 21 |
| Hall space group symbol |
P 2c -2ac |
| Residual factor for all reflections |
0.0439 |
| Residual factor for significantly intense reflections |
0.0369 |
| Weighted residual factors for significantly intense reflections |
0.0894 |
| Weighted residual factors for all reflections included in the refinement |
0.0916 |
| Goodness-of-fit parameter for all reflections included in the refinement |
0.934 |
| Diffraction radiation wavelength |
1.54186 Å |
| Diffraction radiation type |
CuKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
For the version history of this entry, please navigate to main COD server.
The link is:
https://www.crystallography.net/4517420.html