Information card for entry 7002302

Structure parameters

• Formula: C58 H72 N8 P2 Si2 Sn2
• Calculated formula: C58 H72 N8 P2 Si2 Sn2
• SMILES: N1([Si](C)(C)C)[Sn]2[C](c3cccc(n3)n3c(C)cc(n3)C)(=P1(c1ccccc1)c1ccccc1)[Sn]1[C]2(c2cccc(n2)n2c(C)cc(n2)C)=P(N1[Si](C)(C)C)(c1ccccc1)c1ccccc1.CCCCCC
• Title of publication: Synthesis and characterization of Sn(II), Pb(II) and Yb(II) complexes supported by [C(Ph2PNSiMe3){6-(2-RC5H3N)}]2− or [CH(Ph2PNSiMe3){6-(2-RC5H3N)}]− (R = 3,5-dimethyl-1-pyrazolyl or iminophosphoranyl) ligands
• Authors of publication: Chai, Zuo-Yun; Wang, Zhong-Xia
• Journal of publication: Dalton Transactions
• Year of publication: 2009
• Journal issue: 38
• Pages of publication: 8005 - 8012
• a: 9.9696 ± 0.0013 Å
• b: 12.8011 ± 0.0017 Å
• c: 12.8842 ± 0.0017 Å
• α: 100.983 ± 0.002°
• β: 108.444 ± 0.002°
• γ: 91.686 ± 0.002°
• Cell volume: 1524.2 ± 0.3 ų
• Cell temperature: 294 ± 2 K
• Ambient diffraction temperature: 294 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0451
• Residual factor for significantly intense reflections: 0.0318
• Weighted residual factors for significantly intense reflections: 0.0735
• Weighted residual factors for all reflections included in the refinement: 0.0827
• Goodness-of-fit parameter for all reflections included in the refinement: 1.03
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No