Information card for entry 7019386

Structure parameters

• Formula: C40 H64 In2 P2 Si4
• Calculated formula: C40 H64 In2 P2 Si4
• SMILES: [P]1([In](Cc2ccccc2)(Cc2ccccc2)[P]([In]1(Cc1ccccc1)Cc1ccccc1)([Si](C)(C)C)[Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C
• Title of publication: InP nanowires from surfactant-free thermolysis of single molecule precursors.
• Authors of publication: Banerjee, Chiranjib; Hughes, David L.; Bochmann, Manfred; Nann, Thomas
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2012
• Journal volume: 41
• Journal issue: 24
• Pages of publication: 7244 - 7248
• a: 10.6674 ± 0.0009 Å
• b: 10.7597 ± 0.0002 Å
• c: 12.1674 ± 0.0012 Å
• α: 102.721 ± 0.009°
• β: 113.424 ± 0.005°
• γ: 106.954 ± 0.001°
• Cell volume: 1132.32 ± 0.18 ų
• Cell temperature: 140 ± 1 K
• Ambient diffraction temperature: 140 ± 1 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0243
• Residual factor for significantly intense reflections: 0.0203
• Weighted residual factors for significantly intense reflections: 0.0522
• Weighted residual factors for all reflections included in the refinement: 0.0529
• Goodness-of-fit parameter for all reflections included in the refinement: 1.034
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: Mo-Kα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No