Information card for entry 7022724

Structure parameters

• Formula: C57 H48 O P3 Rh Si
• Calculated formula: C57 H48 O P3 Rh Si
• SMILES: [Rh]12([P](c3c([Si]2(CC)c2ccccc2[P]1(c1ccccc1)c1ccccc1)cccc3)(c1ccccc1)c1ccccc1)([P](c1ccccc1)(c1ccccc1)c1ccccc1)C#[O]
• Title of publication: Si-C bond cleavage by hydride complexes of rhodium and iridium: comparison of Si-C(sp(2)) and Si-C(sp(3)) activation.
• Authors of publication: Kameo, Hajime; Ishii, Sho; Nakazawa, Hiroshi
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2013
• Journal volume: 42
• Journal issue: 13
• Pages of publication: 4663 - 4669
• a: 12.272 ± 0.003 Å
• b: 12.984 ± 0.003 Å
• c: 16.181 ± 0.004 Å
• α: 80.866 ± 0.006°
• β: 85.51 ± 0.006°
• γ: 68.89 ± 0.005°
• Cell volume: 2374.1 ± 1 ų
• Cell temperature: 200.1 K
• Ambient diffraction temperature: 200.1 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for significantly intense reflections: 0.0369
• Weighted residual factors for all reflections included in the refinement: 0.1118
• Goodness-of-fit parameter for all reflections included in the refinement: 1.004
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No