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Information card for entry 7039046
Preview
| Coordinates | 7039046.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Chemical name | CsCr(en)2SnSe4 |
|---|---|
| Formula | C4 H16 Cr Cs N4 Se4 Sn |
| Calculated formula | C4 H16 Cr Cs N4 Se4 Sn |
| Title of publication | Solvothermal synthesis, structure and physical properties of Cs[Cr(en)2MSe4] (M = Ge, Sn) with [MSe4](4-) tetrahedra as chelating ligand. |
| Authors of publication | Wang, Yingqi; Wang, Ruiqi; Liu, Qinglong; Lai, Xiaofang; Zhang, Xian; Chen, Haijie; Zheng, Chong; Lin, Jianhua; Huang, Fuqiang |
| Journal of publication | Dalton transactions (Cambridge, England : 2003) |
| Year of publication | 2016 |
| Journal volume | 45 |
| Journal issue | 22 |
| Pages of publication | 9097 - 9102 |
| a | 7.68 ± 0.0003 Å |
| b | 13.1483 ± 0.0006 Å |
| c | 15.7069 ± 0.0007 Å |
| α | 90° |
| β | 91.176 ± 0.004° |
| γ | 90° |
| Cell volume | 1585.73 ± 0.12 Å3 |
| Cell temperature | 180 ± 1 K |
| Ambient diffraction temperature | 180 ± 1 K |
| Number of distinct elements | 7 |
| Space group number | 14 |
| Hermann-Mauguin space group symbol | P 1 21/n 1 |
| Hall space group symbol | -P 2yn |
| Residual factor for all reflections | 0.0376 |
| Residual factor for significantly intense reflections | 0.0296 |
| Weighted residual factors for significantly intense reflections | 0.0616 |
| Weighted residual factors for all reflections included in the refinement | 0.0649 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.046 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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