Information card for entry 7039045
| Chemical name |
CsCr(en)2GeSe4 |
| Formula |
C4 H16 Cr Cs Ge N4 Se4 |
| Calculated formula |
C4 H16 Cr Cs Ge N4 Se4 |
| Title of publication |
Solvothermal synthesis, structure and physical properties of Cs[Cr(en)2MSe4] (M = Ge, Sn) with [MSe4](4-) tetrahedra as chelating ligand. |
| Authors of publication |
Wang, Yingqi; Wang, Ruiqi; Liu, Qinglong; Lai, Xiaofang; Zhang, Xian; Chen, Haijie; Zheng, Chong; Lin, Jianhua; Huang, Fuqiang |
| Journal of publication |
Dalton transactions (Cambridge, England : 2003) |
| Year of publication |
2016 |
| Journal volume |
45 |
| Journal issue |
22 |
| Pages of publication |
9097 - 9102 |
| a |
11.3115 ± 0.0006 Å |
| b |
12.3519 ± 0.0006 Å |
| c |
11.4514 ± 0.0005 Å |
| α |
90° |
| β |
93.359 ± 0.004° |
| γ |
90° |
| Cell volume |
1597.22 ± 0.13 Å3 |
| Cell temperature |
180 ± 1 K |
| Ambient diffraction temperature |
180 ± 1 K |
| Number of distinct elements |
7 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/n 1 |
| Hall space group symbol |
-P 2yn |
| Residual factor for all reflections |
0.055 |
| Residual factor for significantly intense reflections |
0.0411 |
| Weighted residual factors for significantly intense reflections |
0.0871 |
| Weighted residual factors for all reflections included in the refinement |
0.0954 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.038 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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