Information card for entry 7041043
| Formula |
C18 H32 N2 O4 Zn |
| Calculated formula |
C18 H32 N2 O4 Zn |
| SMILES |
CC1=CC(C)=[N](CCCOC)[Zn]2(O1)[N](=C(C=C(C)O2)C)CCCOC |
| Title of publication |
Systematic molecular engineering of Zn-ketoiminates for application as precursors in atomic layer depositions of zinc oxide. |
| Authors of publication |
O' Donoghue, Richard; Peeters, Daniel; Rogalla, Detlef; Becker, Hans-Werner; Rechmann, Julian; Henke, Sebastian; Winter, Manuela; Devi, Anjana |
| Journal of publication |
Dalton transactions (Cambridge, England : 2003) |
| Year of publication |
2016 |
| Journal volume |
45 |
| Journal issue |
47 |
| Pages of publication |
19012 - 19023 |
| a |
10.1081 ± 0.0002 Å |
| b |
5.45455 ± 0.00012 Å |
| c |
17.4938 ± 0.0004 Å |
| α |
90° |
| β |
95.0814 ± 0.0019° |
| γ |
90° |
| Cell volume |
960.73 ± 0.04 Å3 |
| Cell temperature |
106 K |
| Ambient diffraction temperature |
106 K |
| Number of distinct elements |
5 |
| Space group number |
13 |
| Hermann-Mauguin space group symbol |
P 1 2/n 1 |
| Hall space group symbol |
-P 2yac |
| Residual factor for all reflections |
0.0251 |
| Residual factor for significantly intense reflections |
0.0225 |
| Weighted residual factors for significantly intense reflections |
0.0562 |
| Weighted residual factors for all reflections included in the refinement |
0.0572 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.118 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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