Information card for entry 7041046
| Formula |
C20 H38 N4 O2 Zn |
| Calculated formula |
C20 H38 N4 O2 Zn |
| SMILES |
CC1=[N](CCCN(C)C)[Zn]2([N](=C(C=C(C)O2)C)CCCN(C)C)OC(=C1)C |
| Title of publication |
Systematic molecular engineering of Zn-ketoiminates for application as precursors in atomic layer depositions of zinc oxide. |
| Authors of publication |
O' Donoghue, Richard; Peeters, Daniel; Rogalla, Detlef; Becker, Hans-Werner; Rechmann, Julian; Henke, Sebastian; Winter, Manuela; Devi, Anjana |
| Journal of publication |
Dalton transactions (Cambridge, England : 2003) |
| Year of publication |
2016 |
| Journal volume |
45 |
| Journal issue |
47 |
| Pages of publication |
19012 - 19023 |
| a |
10.6251 ± 0.0002 Å |
| b |
5.4088 ± 0.0001 Å |
| c |
20.367 ± 0.0003 Å |
| α |
90° |
| β |
102.906 ± 0.002° |
| γ |
90° |
| Cell volume |
1140.9 ± 0.04 Å3 |
| Cell temperature |
113 ± 2 K |
| Ambient diffraction temperature |
113.15 K |
| Number of distinct elements |
5 |
| Space group number |
13 |
| Hermann-Mauguin space group symbol |
P 1 2/c 1 |
| Hall space group symbol |
-P 2yc |
| Residual factor for all reflections |
0.0234 |
| Residual factor for significantly intense reflections |
0.0222 |
| Weighted residual factors for significantly intense reflections |
0.0557 |
| Weighted residual factors for all reflections included in the refinement |
0.0563 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.144 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
For the version history of this entry, please navigate to main COD server.
The link is:
https://www.crystallography.net/7041046.html