Information card for entry 7041045
| Formula |
C18 H32 N2 O4 Zn |
| Calculated formula |
C18 H32 N2 O4 Zn |
| SMILES |
C1(=CC(C)=[N]([Zn]2(O1)[N](=C(C=C(C)O2)C)CCOCC)CCOCC)C |
| Title of publication |
Systematic molecular engineering of Zn-ketoiminates for application as precursors in atomic layer depositions of zinc oxide. |
| Authors of publication |
O' Donoghue, Richard; Peeters, Daniel; Rogalla, Detlef; Becker, Hans-Werner; Rechmann, Julian; Henke, Sebastian; Winter, Manuela; Devi, Anjana |
| Journal of publication |
Dalton transactions (Cambridge, England : 2003) |
| Year of publication |
2016 |
| Journal volume |
45 |
| Journal issue |
47 |
| Pages of publication |
19012 - 19023 |
| a |
13.2557 ± 0.0004 Å |
| b |
5.8905 ± 0.0001 Å |
| c |
13.9479 ± 0.0006 Å |
| α |
90° |
| β |
106.615 ± 0.003° |
| γ |
90° |
| Cell volume |
1043.62 ± 0.06 Å3 |
| Cell temperature |
105.5 ± 0.8 K |
| Ambient diffraction temperature |
113.15 K |
| Number of distinct elements |
5 |
| Space group number |
13 |
| Hermann-Mauguin space group symbol |
P 1 2/n 1 |
| Hall space group symbol |
-P 2yac |
| Residual factor for all reflections |
0.0308 |
| Residual factor for significantly intense reflections |
0.0301 |
| Weighted residual factors for significantly intense reflections |
0.0802 |
| Weighted residual factors for all reflections included in the refinement |
0.081 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.066 |
| Diffraction radiation probe |
x-ray |
| Diffraction radiation wavelength |
1.54178 Å |
| Diffraction radiation type |
CuKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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