Information card for entry 7050209

Structure parameters

• Formula: C36 H44 Ga2 I4 N4
• Calculated formula: C36 H44 Ga2 I4 N4
• SMILES: c1cccc2[C@@H](N(c3c(cccc3C(C)C)C(C)C)[Ga](I)(I)[n]12)[C@H]1c2cccc[n]2[Ga](I)(I)N1c1c(cccc1C(C)C)C(C)C.c1cccc2[C@H](N(c3c(cccc3C(C)C)C(C)C)[Ga](I)(I)[n]12)[C@@H]1c2cccc[n]2[Ga](I)(I)N1c1c(cccc1C(C)C)C(C)C
• Title of publication: The reactivity of gallium(i) and indium(i) halides towards bipyridines, terpyridines, imino-substituted pyridines and bis(imino)acenaphthenes
• Authors of publication: Baker, Robert J.; Jones, Cameron; Kloth, Marc; Mills, David P.
• Journal of publication: New Journal of Chemistry
• Year of publication: 2004
• Journal volume: 28
• Journal issue: 2
• Pages of publication: 207
• a: 22.813 ± 0.005 Å
• b: 14.364 ± 0.003 Å
• c: 17.672 ± 0.004 Å
• α: 90°
• β: 124.81 ± 0.03°
• γ: 90°
• Cell volume: 4755 ± 2 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0445
• Residual factor for significantly intense reflections: 0.0325
• Weighted residual factors for significantly intense reflections: 0.0696
• Weighted residual factors for all reflections included in the refinement: 0.0736
• Goodness-of-fit parameter for all reflections included in the refinement: 1.046
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No