Information card for entry 7050210

Structure parameters

• Formula: C20 H28 Ga2 I4 N4
• Calculated formula: C20 H28 Ga2 I4 N4
• SMILES: CC(N1[Ga](I)(I)[n]2c(cccc2)[C@H]1[C@H]1c2cccc[n]2[Ga](I)(I)N1C(C)(C)C)(C)C
• Title of publication: The reactivity of gallium(i) and indium(i) halides towards bipyridines, terpyridines, imino-substituted pyridines and bis(imino)acenaphthenes
• Authors of publication: Baker, Robert J.; Jones, Cameron; Kloth, Marc; Mills, David P.
• Journal of publication: New Journal of Chemistry
• Year of publication: 2004
• Journal volume: 28
• Journal issue: 2
• Pages of publication: 207
• a: 9.617 ± 0.0019 Å
• b: 14.831 ± 0.003 Å
• c: 10.14 ± 0.002 Å
• α: 90°
• β: 107.11 ± 0.03°
• γ: 90°
• Cell volume: 1382.3 ± 0.5 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0326
• Residual factor for significantly intense reflections: 0.029
• Weighted residual factors for significantly intense reflections: 0.0669
• Weighted residual factors for all reflections included in the refinement: 0.0683
• Goodness-of-fit parameter for all reflections included in the refinement: 1.071
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No