Information card for entry 7104297
| Formula |
C22 H7 F5 O2 S3 |
| Calculated formula |
C22 H7 F5 O2 S3 |
| SMILES |
s1c(cc2sc3c(sc(c3)C(=O)c3c(c(c(c(c3F)F)F)F)F)c12)C(=O)c1ccccc1 |
| Title of publication |
One-pot [1+1+1] synthesis of dithieno[2,3-b:3',2'-d]thiophene (DTT) and their functionalized derivatives for organic thin-film transistors. |
| Authors of publication |
Chen, Ming-Chou; Chiang, Yen-Ju; Kim, Choongik; Guo, Yue-Jhih; Chen, Sheng-Yu; Liang, You-Jhih; Huang, Yu-Wen; Hu, Tarng-Shiang; Lee, Gene-Hsiang; Facchetti, Antonio; Marks, Tobin J |
| Journal of publication |
Chemical communications (Cambridge, England) |
| Year of publication |
2009 |
| Journal volume |
34 |
| Journal issue |
14 |
| Pages of publication |
1846 - 1848 |
| a |
6.2481 ± 0.0003 Å |
| b |
40.288 ± 0.002 Å |
| c |
7.774 ± 0.0004 Å |
| α |
90° |
| β |
107.795 ± 0.0012° |
| γ |
90° |
| Cell volume |
1863.27 ± 0.16 Å3 |
| Cell temperature |
200 ± 2 K |
| Ambient diffraction temperature |
200 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/c 1 |
| Hall space group symbol |
-P 2ybc |
| Residual factor for all reflections |
0.0547 |
| Residual factor for significantly intense reflections |
0.04 |
| Weighted residual factors for significantly intense reflections |
0.0995 |
| Weighted residual factors for all reflections included in the refinement |
0.1122 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.096 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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