Information card for entry 7104296
| Formula |
C22 H2 F10 O2 S3 |
| Calculated formula |
C22 H2 F10 O2 S3 |
| SMILES |
s1c2c(sc(c2)C(=O)c2c(c(c(c(c2F)F)F)F)F)c2sc(cc12)C(=O)c1c(c(c(c(c1F)F)F)F)F |
| Title of publication |
One-pot [1+1+1] synthesis of dithieno[2,3-b:3',2'-d]thiophene (DTT) and their functionalized derivatives for organic thin-film transistors. |
| Authors of publication |
Chen, Ming-Chou; Chiang, Yen-Ju; Kim, Choongik; Guo, Yue-Jhih; Chen, Sheng-Yu; Liang, You-Jhih; Huang, Yu-Wen; Hu, Tarng-Shiang; Lee, Gene-Hsiang; Facchetti, Antonio; Marks, Tobin J |
| Journal of publication |
Chemical communications (Cambridge, England) |
| Year of publication |
2009 |
| Journal volume |
34 |
| Journal issue |
14 |
| Pages of publication |
1846 - 1848 |
| a |
6.1883 ± 0.0003 Å |
| b |
9.334 ± 0.0005 Å |
| c |
18.096 ± 0.001 Å |
| α |
103.105 ± 0.001° |
| β |
97.954 ± 0.001° |
| γ |
93.81 ± 0.001° |
| Cell volume |
1003.04 ± 0.09 Å3 |
| Cell temperature |
150 ± 2 K |
| Ambient diffraction temperature |
150 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.0533 |
| Residual factor for significantly intense reflections |
0.0413 |
| Weighted residual factors for significantly intense reflections |
0.0884 |
| Weighted residual factors for all reflections included in the refinement |
0.0931 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.071 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/7104296.html