Information card for entry 7104312
| Formula |
C28 H56 Hf N4 O8 |
| Calculated formula |
C28 H56 Hf N4 O8 |
| SMILES |
[Hf]1234(OC(=[N]2C(C)C)OC(C)C)(OC(OC(C)C)=[N]4C(C)C)(OC(OC(C)C)=[N]1C(C)C)OC(=[N]3C(C)C)OC(C)C |
| Title of publication |
Hafnium carbamates and ureates: new class of precursors for low-temperature growth of HfO2 thin films. |
| Authors of publication |
Pothiraja, Ramasamy; Milanov, Andrian P; Barreca, Davide; Gasparotto, Alberto; Becker, Hans-Werner; Winter, Manuela; Fischer, Roland A; Devi, Anjana |
| Journal of publication |
Chemical communications (Cambridge, England) |
| Year of publication |
2009 |
| Journal volume |
34 |
| Journal issue |
15 |
| Pages of publication |
1978 - 1980 |
| a |
18.7586 ± 0.0002 Å |
| b |
18.7004 ± 0.0002 Å |
| c |
20.4731 ± 0.0002 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
7181.83 ± 0.13 Å3 |
| Cell temperature |
111 ± 2 K |
| Ambient diffraction temperature |
111 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
61 |
| Hermann-Mauguin space group symbol |
P b c a |
| Hall space group symbol |
-P 2ac 2ab |
| Residual factor for all reflections |
0.0621 |
| Residual factor for significantly intense reflections |
0.0299 |
| Weighted residual factors for significantly intense reflections |
0.0534 |
| Weighted residual factors for all reflections included in the refinement |
0.0686 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.301 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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