Information card for entry 7204932

Structure parameters

• Formula: C32 H16 F52 S4 Sn
• Calculated formula: C32 H16 F52 S4 Sn
• SMILES: C(CC(F)(C(F)(C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)F)F)S[Sn](SCCC(C(C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)F)(SCCC(C(C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)F)SCCC(C(C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)F
• Title of publication: Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(iv) precursors
• Authors of publication: Hibbert, Tom G.; Mahon, Mary F.; Molloy, Kieran C.; Price, Louise S.; Parkin, Ivan P.
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2001
• Journal volume: 11
• Journal issue: 2
• Pages of publication: 469
• a: 46.295 ± 0.005 Å
• b: 5.334 ± 0.001 Å
• c: 20.156 ± 0.002 Å
• α: 90°
• β: 94.11 ± 0.01°
• γ: 90°
• Cell volume: 4964.5 ± 1.2 ų
• Cell temperature: 170 ± 2 K
• Ambient diffraction temperature: 170 ± 2 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0479
• Residual factor for significantly intense reflections: 0.0319
• Weighted residual factors for significantly intense reflections: 0.0839
• Weighted residual factors for all reflections included in the refinement: 0.0897
• Goodness-of-fit parameter for all reflections included in the refinement: 0.869
• Diffraction radiation wavelength: 0.71069 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No