Information card for entry 7208136

Structure parameters

• Formula: C19 H12 O
• Calculated formula: C19 H12 O
• SMILES: O=C1[C@H]2c3ccccc3[C@@H]1c1cc3ccccc3cc21
• Title of publication: Tetracene-based field-effect transistors using solution processes
• Authors of publication: Chien, Ching-Ting; Lin, Chih-Chun; Watanabe, Motonori; Lin, Yan-Duo; Chao, Ting-Han; Chiang, Ta-chung; Huang, Xin-Hua; Wen, Yuh-Sheng; Tu, Chih-Hsin; Sun, Chia-Hsing; Chow, Tahsin J.
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2012
• Journal volume: 22
• Journal issue: 26
• Pages of publication: 13070
• a: 5.8708 ± 0.0002 Å
• b: 7.6845 ± 0.0003 Å
• c: 28.2976 ± 0.0009 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 1276.62 ± 0.08 ų
• Cell temperature: 200 ± 2 K
• Ambient diffraction temperature: 200 ± 2 K
• Number of distinct elements: 3
• Space group number: 19
• Hermann-Mauguin space group symbol: P 21 21 21
• Hall space group symbol: P 2ac 2ab
• Residual factor for all reflections: 0.0684
• Residual factor for significantly intense reflections: 0.0389
• Weighted residual factors for significantly intense reflections: 0.0824
• Weighted residual factors for all reflections included in the refinement: 0.108
• Goodness-of-fit parameter for all reflections included in the refinement: 1.026
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No