Information card for entry 7208135

Structure parameters

• Formula: C22 H18
• Calculated formula: C22 H18
• SMILES: c1cccc2[C@H]3c4cc5ccccc5cc4[C@@H](c12)C3=C(C)C
• Title of publication: Tetracene-based field-effect transistors using solution processes
• Authors of publication: Chien, Ching-Ting; Lin, Chih-Chun; Watanabe, Motonori; Lin, Yan-Duo; Chao, Ting-Han; Chiang, Ta-chung; Huang, Xin-Hua; Wen, Yuh-Sheng; Tu, Chih-Hsin; Sun, Chia-Hsing; Chow, Tahsin J.
• Journal of publication: Journal of Materials Chemistry
• Year of publication: 2012
• Journal volume: 22
• Journal issue: 26
• Pages of publication: 13070
• a: 14.9138 ± 0.0013 Å
• b: 15.253 ± 0.0012 Å
• c: 15.136 ± 0.0014 Å
• α: 90°
• β: 118.815 ± 0.004°
• γ: 90°
• Cell volume: 3016.8 ± 0.5 ų
• Cell temperature: 100 ± 0.1 K
• Ambient diffraction temperature: 100 ± 0.1 K
• Number of distinct elements: 2
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0839
• Residual factor for significantly intense reflections: 0.0609
• Weighted residual factors for significantly intense reflections: 0.1515
• Weighted residual factors for all reflections included in the refinement: 0.1648
• Goodness-of-fit parameter for all reflections included in the refinement: 1.066
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No