Information card for entry 7704308

Structure parameters

• Formula: C45 H73 Br N2 O4 S2 Si5
• Calculated formula: C45 H73 Br N2 O4 S2 Si5
• SMILES: [Si]1(Br)(C2=C1CN(CCCN(C2)S(=O)(=O)c1ccc(cc1)C)S(=O)(=O)c1ccc(cc1)C)[c]1c(cc(cc1C([Si](C)(C)C)[Si](C)(C)C)C(C)(C)C)C([Si](C)(C)C)[Si](C)(C)C
• Title of publication: 1,2-Insertion reactions of alkynes into Ge-C bonds of arylbromogermylene.
• Authors of publication: Sugahara, Tomohiro; Espinosa Ferao, Arturo; Rey Planells, Alicia; Guo, Jing-Dong; Aoyama, Shin; Igawa, Kazunobu; Tomooka, Katsuhiko; Sasamori, Takahiro; Hashizume, Daisuke; Nagase, Shigeru; Tokitoh, Norihiro
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2020
• Journal volume: 49
• Journal issue: 21
• Pages of publication: 7189 - 7196
• a: 10.5503 ± 0.0005 Å
• b: 20.8083 ± 0.0007 Å
• c: 24.3847 ± 0.0009 Å
• α: 90°
• β: 93.32 ± 0.003°
• γ: 90°
• Cell volume: 5344.3 ± 0.4 ų
• Cell temperature: 103 ± 2 K
• Ambient diffraction temperature: 103 ± 2 K
• Number of distinct elements: 7
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.1052
• Residual factor for significantly intense reflections: 0.0613
• Weighted residual factors for significantly intense reflections: 0.1464
• Weighted residual factors for all reflections included in the refinement: 0.1655
• Goodness-of-fit parameter for all reflections included in the refinement: 1.052
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No