Information card for entry 7704309
| Formula |
C30 H59 Br Si5 |
| Calculated formula |
C30 H59 Br Si5 |
| SMILES |
Br[Si]1(c2c(C([Si](C)(C)C)[Si](C)(C)C)cc(cc2C([Si](C)(C)C)[Si](C)(C)C)C(C)(C)C)C(=C1CC)CC |
| Title of publication |
1,2-Insertion reactions of alkynes into Ge-C bonds of arylbromogermylene. |
| Authors of publication |
Sugahara, Tomohiro; Espinosa Ferao, Arturo; Rey Planells, Alicia; Guo, Jing-Dong; Aoyama, Shin; Igawa, Kazunobu; Tomooka, Katsuhiko; Sasamori, Takahiro; Hashizume, Daisuke; Nagase, Shigeru; Tokitoh, Norihiro |
| Journal of publication |
Dalton transactions (Cambridge, England : 2003) |
| Year of publication |
2020 |
| Journal volume |
49 |
| Journal issue |
21 |
| Pages of publication |
7189 - 7196 |
| a |
10.1417 ± 0.0002 Å |
| b |
16.7487 ± 0.0003 Å |
| c |
22.3189 ± 0.0004 Å |
| α |
90° |
| β |
92.75 ± 0.002° |
| γ |
90° |
| Cell volume |
3786.73 ± 0.12 Å3 |
| Cell temperature |
103 ± 2 K |
| Ambient diffraction temperature |
103 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/n 1 |
| Hall space group symbol |
-P 2yn |
| Residual factor for all reflections |
0.0482 |
| Residual factor for significantly intense reflections |
0.0372 |
| Weighted residual factors for significantly intense reflections |
0.091 |
| Weighted residual factors for all reflections included in the refinement |
0.0956 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.022 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/7704309.html