Information card for entry 7714164

Structure parameters

• Common name: Sn(tbip)2
• Formula: C16 H30 N4 Sn
• Calculated formula: C16 H30 N4 Sn
• SMILES: [Sn]12(N(C3=[N]1CCC3)C(C)(C)C)N(C1=[N]2CCC1)C(C)(C)C
• Title of publication: Evaluation of tin nitride (Sn₃N₄) <i>via</i> atomic layer deposition using novel volatile Sn precursors.
• Authors of publication: Park, Hyeonbin; Choi, Heenang; Shin, Sunyoung; Park, Bo Keun; Kang, Kibum; Ryu, Ji Yeon; Eom, Taeyong; Chung, Taek-Mo
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2023
• a: 11.2786 ± 0.0007 Å
• b: 19.0407 ± 0.0011 Å
• c: 8.7371 ± 0.0005 Å
• α: 90°
• β: 104.92 ± 0.003°
• γ: 90°
• Cell volume: 1813.06 ± 0.19 ų
• Cell temperature: 100 ± 1 K
• Ambient diffraction temperature: 100.15 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0351
• Residual factor for significantly intense reflections: 0.0281
• Weighted residual factors for significantly intense reflections: 0.0632
• Weighted residual factors for all reflections included in the refinement: 0.0659
• Goodness-of-fit parameter for all reflections included in the refinement: 1.0084
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No