Information card for entry 7714165

Structure parameters

• Common name: Sn(tbtp)2
• Formula: C18 H34 N4 Sn
• Calculated formula: C18 H34 N4 Sn
• SMILES: [Sn]12([N]3=C(N1C(C)(C)C)CCCC3)[N]1=C(N2C(C)(C)C)CCCC1
• Title of publication: Evaluation of tin nitride (Sn₃N₄) <i>via</i> atomic layer deposition using novel volatile Sn precursors.
• Authors of publication: Park, Hyeonbin; Choi, Heenang; Shin, Sunyoung; Park, Bo Keun; Kang, Kibum; Ryu, Ji Yeon; Eom, Taeyong; Chung, Taek-Mo
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2023
• a: 12.1302 ± 0.0004 Å
• b: 10.2568 ± 0.0004 Å
• c: 16.2262 ± 0.0005 Å
• α: 90°
• β: 102.831 ± 0.001°
• γ: 90°
• Cell volume: 1968.4 ± 0.12 ų
• Cell temperature: 100 ± 1 K
• Ambient diffraction temperature: 100 ± 1 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0287
• Residual factor for significantly intense reflections: 0.0257
• Weighted residual factors for significantly intense reflections: 0.0619
• Weighted residual factors for all reflections included in the refinement: 0.0636
• Goodness-of-fit parameter for all reflections included in the refinement: 1.068
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No