Information card for entry 7715667

Structure parameters

• Formula: C32 H88 N4 O3 Si8 Sm2
• Calculated formula: C32 H88 N4 O3 Si8 Sm2
• SMILES: [Sm](O[Sm](N([Si](C)(C)C)[Si](C)(C)C)([O]1CCCC1)N([Si](C)(C)C)[Si](C)(C)C)(N([Si](C)(C)C)[Si](C)(C)C)([O]1CCCC1)N([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Formation of <i>N</i>,<i>N</i>,<i>N</i>',<i>N</i>'-tetramethylethylenediamine <i>via</i> coupling of the two charge reversed C-N bonds of Me₃NO in the presence of an Eu(II) bis(trimethylsilyl)amide complex.
• Authors of publication: Li, Yangjuan; Gong, Yu
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2024
• Journal volume: 53
• Journal issue: 12
• Pages of publication: 5342 - 5345
• a: 10.899 ± 0.0003 Å
• b: 12.0887 ± 0.0003 Å
• c: 12.2407 ± 0.0003 Å
• α: 119.001 ± 0.003°
• β: 102.554 ± 0.002°
• γ: 91.31 ± 0.002°
• Cell volume: 1361.2 ± 0.08 ų
• Cell temperature: 179.99 ± 0.1 K
• Ambient diffraction temperature: 179.99 ± 0.1 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0308
• Residual factor for significantly intense reflections: 0.0276
• Weighted residual factors for significantly intense reflections: 0.0738
• Weighted residual factors for all reflections included in the refinement: 0.0753
• Goodness-of-fit parameter for all reflections included in the refinement: 1.042
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No