Information card for entry 7718911

Structure parameters

• Formula: C51.25 H102 Ge9 Ir O P Si12
• Calculated formula: C46 H96 Ge9 Ir O P Si12
• Title of publication: Oxidative addition of Si-H bonds to metal-decorated Zintl clusters [Hyp₃Ge₉Ir(CO)PR₃] (R = Ph, ^<i>p</i>tolyl, Me).
• Authors of publication: Willeit, Nicole S.; Kratky, Tim; Hlukhyy, Viktor; Günther, Sebastian; Fässler, Thomas F
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2025
• Journal volume: 54
• Journal issue: 28
• Pages of publication: 10973 - 10983
• a: 15.66 ± 0.003 Å
• b: 25.28 ± 0.005 Å
• c: 21.63 ± 0.004 Å
• α: 90°
• β: 107.8 ± 0.03°
• γ: 90°
• Cell volume: 8153 ± 3 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 7
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.1351
• Residual factor for significantly intense reflections: 0.0572
• Weighted residual factors for significantly intense reflections: 0.1064
• Weighted residual factors for all reflections included in the refinement: 0.1266
• Goodness-of-fit parameter for all reflections included in the refinement: 0.947
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No