Information card for entry 1502787
| Formula |
C32 H48 B2 Ge O4 |
| Calculated formula |
C32 H48 B2 Ge O4 |
| SMILES |
[Ge]1(c2cc(ccc2c2c1cc(cc2)B1OC(C(O1)(C)C)(C)C)B1OC(C(O1)(C)C)(C)C)(CCCC)CCCC |
| Title of publication |
Germafluorenes: New Heterocycles for Plastic Electronics |
| Authors of publication |
Allard, Nicolas; Aïch, Réda Badrou; Gendron, David; Boudreault, Pierre-Luc T.; Tessier, Christian; Alem, Salima; Tse, Shing-Chi; Tao, Ye; Leclerc, Mario |
| Journal of publication |
Macromolecules |
| Year of publication |
2010 |
| Journal volume |
43 |
| Journal issue |
5 |
| Pages of publication |
2328 |
| a |
15.597 ± 0.003 Å |
| b |
18.542 ± 0.003 Å |
| c |
11.201 ± 0.002 Å |
| α |
90° |
| β |
94.484 ± 0.002° |
| γ |
90° |
| Cell volume |
3229.4 ± 1 Å3 |
| Cell temperature |
193 ± 2 K |
| Ambient diffraction temperature |
193 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/c 1 |
| Hall space group symbol |
-P 2ybc |
| Residual factor for all reflections |
0.1024 |
| Residual factor for significantly intense reflections |
0.0535 |
| Weighted residual factors for significantly intense reflections |
0.1266 |
| Weighted residual factors for all reflections included in the refinement |
0.1484 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.083 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
Yes |
| Has Fobs |
No |
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