Information card for entry 1502788
| Formula |
C40 H64 B2 Ge O4 |
| Calculated formula |
C40 H64 B2 Ge O4 |
| SMILES |
[Ge]1(c2cc(B3OC(C(O3)(C)C)(C)C)ccc2c2c1cc(B1OC(C(O1)(C)C)(C)C)cc2)(CCCCCCCC)CCCCCCCC |
| Title of publication |
Germafluorenes: New Heterocycles for Plastic Electronics |
| Authors of publication |
Allard, Nicolas; Aïch, Réda Badrou; Gendron, David; Boudreault, Pierre-Luc T.; Tessier, Christian; Alem, Salima; Tse, Shing-Chi; Tao, Ye; Leclerc, Mario |
| Journal of publication |
Macromolecules |
| Year of publication |
2010 |
| Journal volume |
43 |
| Journal issue |
5 |
| Pages of publication |
2328 |
| a |
19.72 ± 0.012 Å |
| b |
19.029 ± 0.011 Å |
| c |
10.873 ± 0.007 Å |
| α |
90° |
| β |
94.88 ± 0.009° |
| γ |
90° |
| Cell volume |
4065 ± 4 Å3 |
| Cell temperature |
200 ± 2 K |
| Ambient diffraction temperature |
200 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/c 1 |
| Hall space group symbol |
-P 2ybc |
| Residual factor for all reflections |
0.1845 |
| Residual factor for significantly intense reflections |
0.0647 |
| Weighted residual factors for significantly intense reflections |
0.1134 |
| Weighted residual factors for all reflections included in the refinement |
0.1539 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.059 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
Yes |
| Has Fobs |
No |
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