Information card for entry 1508073

Structure parameters

• Formula: C28 H52 N4 Si2 U
• Calculated formula: C28 H52 N4 Si2 U
• SMILES: [U]12345678(N([Si](C)(C)C)[Si](C)(C)C)([c]9([c]3([c]4([c]2([c]69C)CC)C)C)C)([c]2([c]1([c]5([c]7([c]82C)C)C)C)CC)N=N#N
• Title of publication: Uranium azide photolysis results in C-H bond activation and provides evidence for a terminal uranium nitride.
• Authors of publication: Thomson, Robert K.; Cantat, Thibault; Scott, Brian L.; Morris, David E.; Batista, Enrique R.; Kiplinger, Jaqueline L.
• Journal of publication: Nature chemistry
• Year of publication: 2010
• Journal volume: 2
• Journal issue: 9
• Pages of publication: 723 - 729
• a: 9.5877 ± 0.0007 Å
• b: 10.3919 ± 0.0008 Å
• c: 18.0297 ± 0.0014 Å
• α: 75.277 ± 0.001°
• β: 88.379 ± 0.001°
• γ: 63.624 ± 0.001°
• Cell volume: 1549.1 ± 0.2 ų
• Cell temperature: 120 ± 1 K
• Ambient diffraction temperature: 120 ± 1 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0215
• Residual factor for significantly intense reflections: 0.0198
• Weighted residual factors for significantly intense reflections: 0.053
• Weighted residual factors for all reflections included in the refinement: 0.0539
• Goodness-of-fit parameter for all reflections included in the refinement: 0.952
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No