Information card for entry 1568576

Structure parameters

• Formula: C10 H10 N2 S6 Zn
• Calculated formula: C10 H10 N2 S6 Zn
• Title of publication: Switching the memory behaviour from binary to ternary by triggering S₆^2- relaxation in polysulfide-bearing zinc-organic complex molecular memories.
• Authors of publication: Zhou, Pan-Ke; Lin, Xiao-Li; Chee, Mun Yin; Lew, Wen Siang; Zeng, Tao; Li, Hao-Hong; Chen, Xiong; Chen, Zhi-Rong; Zheng, Hui-Dong
• Journal of publication: Materials horizons
• Year of publication: 2023
• Journal volume: 10
• Journal issue: 7
• Pages of publication: 2535 - 2541
• a: 13.6639 ± 0.0013 Å
• b: 9.0204 ± 0.0008 Å
• c: 14.8989 ± 0.0019 Å
• α: 90°
• β: 115.024 ± 0.003°
• γ: 90°
• Cell volume: 1664 ± 0.3 ų
• Cell temperature: 296.15 K
• Ambient diffraction temperature: 296.15 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0652
• Residual factor for significantly intense reflections: 0.0315
• Weighted residual factors for significantly intense reflections: 0.0573
• Weighted residual factors for all reflections included in the refinement: 0.0647
• Goodness-of-fit parameter for all reflections included in the refinement: 1.004
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No