Information card for entry 1568577

Structure parameters

• Formula: C12 H8 N2 S6 Zn
• Calculated formula: C12 H8 N2 S6 Zn
• Title of publication: Switching the memory behaviour from binary to ternary by triggering S₆^2- relaxation in polysulfide-bearing zinc-organic complex molecular memories.
• Authors of publication: Zhou, Pan-Ke; Lin, Xiao-Li; Chee, Mun Yin; Lew, Wen Siang; Zeng, Tao; Li, Hao-Hong; Chen, Xiong; Chen, Zhi-Rong; Zheng, Hui-Dong
• Journal of publication: Materials horizons
• Year of publication: 2023
• Journal volume: 10
• Journal issue: 7
• Pages of publication: 2535 - 2541
• a: 8.1617 ± 0.0009 Å
• b: 9.4765 ± 0.001 Å
• c: 12.0105 ± 0.0015 Å
• α: 109.535 ± 0.004°
• β: 99.066 ± 0.004°
• γ: 100.714 ± 0.004°
• Cell volume: 835.64 ± 0.17 ų
• Cell temperature: 296.15 K
• Ambient diffraction temperature: 296.15 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0922
• Residual factor for significantly intense reflections: 0.0667
• Weighted residual factors for significantly intense reflections: 0.1693
• Weighted residual factors for all reflections included in the refinement: 0.1863
• Goodness-of-fit parameter for all reflections included in the refinement: 1.065
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No