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Information card for entry 1571735
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Coordinates | 1571735.cif |
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Original paper (by DOI) | HTML |
Formula | C30 H36 Br2 N2 O4 |
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Calculated formula | C30 H36 Br2 N2 O4 |
Title of publication | Engineered solid-state aggregates in brickwork stacks of n-type organic semiconductors: a way to achieve high electron mobility. |
Authors of publication | Giri, Indrajit; Chhetri, Shant; John P, Jesslyn; Mondal, Madalasa; Dey, Arka Bikash; Vijayaraghavan, Ratheesh K. |
Journal of publication | Chemical science |
Year of publication | 2024 |
Journal volume | 15 |
Journal issue | 25 |
Pages of publication | 9630 - 9640 |
a | 5.1363 ± 0.0001 Å |
b | 7.0488 ± 0.0002 Å |
c | 20.63 ± 0.0006 Å |
α | 87.499 ± 0.002° |
β | 87.373 ± 0.002° |
γ | 75.469 ± 0.002° |
Cell volume | 721.85 ± 0.03 Å3 |
Cell temperature | 293 ± 2 K |
Ambient diffraction temperature | 293 ± 2 K |
Number of distinct elements | 5 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.0487 |
Residual factor for significantly intense reflections | 0.0458 |
Weighted residual factors for significantly intense reflections | 0.1233 |
Weighted residual factors for all reflections included in the refinement | 0.1274 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.049 |
Diffraction radiation probe | x-ray |
Diffraction radiation wavelength | 1.54184 Å |
Diffraction radiation type | CuKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/1571735.html
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Users of the data should acknowledge the original authors of the
structural data.