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Information card for entry 1571736
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Coordinates | 1571736.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C30 H38 N2 O4 |
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Calculated formula | C30 H38 N2 O4 |
Title of publication | Engineered solid-state aggregates in brickwork stacks of n-type organic semiconductors: a way to achieve high electron mobility. |
Authors of publication | Giri, Indrajit; Chhetri, Shant; John P, Jesslyn; Mondal, Madalasa; Dey, Arka Bikash; Vijayaraghavan, Ratheesh K. |
Journal of publication | Chemical science |
Year of publication | 2024 |
Journal volume | 15 |
Journal issue | 25 |
Pages of publication | 9630 - 9640 |
a | 5.088 ± 0.008 Å |
b | 7.898 ± 0.012 Å |
c | 17.03 ± 0.02 Å |
α | 93.5 ± 0.05° |
β | 92.9 ± 0.04° |
γ | 93.65 ± 0.05° |
Cell volume | 680.7 ± 1.7 Å3 |
Cell temperature | 100 ± 2 K |
Ambient diffraction temperature | 100 K |
Number of distinct elements | 4 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.2081 |
Residual factor for significantly intense reflections | 0.1776 |
Weighted residual factors for significantly intense reflections | 0.3906 |
Weighted residual factors for all reflections included in the refinement | 0.4118 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.668 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/1571736.html
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Users of the data should acknowledge the original authors of the
structural data.