Information card for entry 2001513

Structure parameters

• Chemical name: Bis[(trimethylsilylmethoxy)bis(trimethylsilylmethyl)gallium]
• Formula: C24 H66 Ga2 O2 Si6
• Calculated formula: C24 H66 Ga2 O2 Si6
• SMILES: [Ga](OC[Si](C)(C)C)(C[Si](C)(C)C)C[Si](C)(C)C
• Title of publication: Structure of bis-μ-[(trimethylsilylmethanolato-<i>O</i>)-bis(trimethylsilylmethyl)gallium] and bis-μ-[(trimethylsilylmethanolato-<i>O</i>)-bis(trimethylsilylmethyl)indium]
• Authors of publication: Dembowski, U.; Pape, T.; Herbst-Irmer, R.; Pohl, E.; Roesky, H. W.; Sheldrick, G. M.
• Journal of publication: Acta Crystallographica Section C
• Year of publication: 1993
• Journal volume: 49
• Journal issue: 7
• Pages of publication: 1309 - 1311
• a: 12.24 ± 0.002 Å
• b: 12.642 ± 0.002 Å
• c: 14.039 ± 0.002 Å
• α: 103.86 ± 0.01°
• β: 104.16 ± 0.01°
• γ: 90.62 ± 0.01°
• Cell volume: 2039.5 ± 0.6 ų
• Cell temperature: 153 ± 1 K
• Ambient diffraction temperature: 153 ± 1 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0744
• Residual factor for significantly intense reflections: 0.0441
• Weighted residual factors for all reflections: 0.1015
• Weighted residual factors for significantly intense reflections: 0.0822
• Goodness-of-fit parameter for all reflections: 1.109
• Goodness-of-fit parameter for significantly intense reflections: 1.054
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No