Information card for entry 2001514

Structure parameters

• Chemical name: Bis((trimethylsiloxy)bis(trimethylsilylmethyl)indium)
• Formula: C22 H62 In2 O2 Si6
• Calculated formula: C22 H62 In2 O2 Si6
• SMILES: [In](O[Si](C)(C)C)(C[Si](C)(C)C)C[Si](C)(C)C
• Title of publication: Structure of bis-μ-[(trimethylsilylmethanolato-<i>O</i>)-bis(trimethylsilylmethyl)gallium] and bis-μ-[(trimethylsilylmethanolato-<i>O</i>)-bis(trimethylsilylmethyl)indium]
• Authors of publication: Dembowski, U.; Pape, T.; Herbst-Irmer, R.; Pohl, E.; Roesky, H. W.; Sheldrick, G. M.
• Journal of publication: Acta Crystallographica Section C
• Year of publication: 1993
• Journal volume: 49
• Journal issue: 7
• Pages of publication: 1309 - 1311
• a: 9.887 ± 0.004 Å
• b: 11.879 ± 0.004 Å
• c: 17.586 ± 0.006 Å
• α: 104.4 ± 0.02°
• β: 93.43 ± 0.03°
• γ: 94.66 ± 0.02°
• Cell volume: 1987.1 ± 1.3 ų
• Cell temperature: 153 ± 1 K
• Ambient diffraction temperature: 153 ± 1 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0356
• Residual factor for significantly intense reflections: 0.026
• Weighted residual factors for all reflections: 0.0627
• Weighted residual factors for significantly intense reflections: 0.0543
• Goodness-of-fit parameter for all reflections: 1.069
• Goodness-of-fit parameter for significantly intense reflections: 1.049
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No