Information card for entry 2004987

Structure parameters

• Formula: Ga2 O3
• Calculated formula: Ga2 O3
• SMILES: [Ga+3].[Ga+3].[O-2].[O-2].[O-2]
• Title of publication: A Reinvestigation of β-Gallium Oxide
• Authors of publication: Åhman, J.; Svensson, G.; Albertsson, J.
• Journal of publication: Acta Crystallographica Section C
• Year of publication: 1996
• Journal volume: 52
• Journal issue: 6
• Pages of publication: 1336 - 1338
• a: 12.214 ± 0.003 Å
• b: 3.0371 ± 0.0009 Å
• c: 5.7981 ± 0.0009 Å
• α: 90°
• β: 103.83 ± 0.02°
• γ: 90°
• Cell volume: 208.85 ± 0.09 ų
• Cell temperature: 273.2 K
• Ambient diffraction temperature: 273 K
• Number of distinct elements: 2
• Space group number: 12
• Hermann-Mauguin space group symbol: C 1 2/m 1
• Hall space group symbol: -C 2y
• Residual factor for significantly intense reflections: 0.022
• Weighted residual factors for significantly intense reflections: 0.032
• Goodness-of-fit parameter for significantly intense reflections: 1.08
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No