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Information card for entry 2005345
Preview
| Coordinates | 2005345.cif |
|---|---|
| Original IUCr paper | HTML |
| Chemical name | Bis(η^5-trimethylsilylcyclopentadienyl)-diiodo-titanium(IV) |
|---|---|
| Formula | C16 H26 I2 Si2 Ti |
| Calculated formula | C16 H26 I2 Si2 Ti |
| SMILES | C[Si]([c]12[cH]3[Ti]4567892([cH]1[cH]4[cH]35)(I)(I)[cH]1[cH]6[cH]8[c]9([cH]71)[Si](C)(C)C)(C)C |
| Title of publication | Diiodobis(η^5^-trimethylsilylcyclopentadienyl)titanium(IV) |
| Authors of publication | Drew, M. G. B.; Delgado, E.; Hernandez, E.; Baker, P. K.; Mansilla, N. |
| Journal of publication | Acta Crystallographica Section C |
| Year of publication | 1996 |
| Journal volume | 52 |
| Journal issue | 9 |
| Pages of publication | 2168 - 2170 |
| a | 13.44 ± 0.009 Å |
| b | 7.205 ± 0.009 Å |
| c | 22.388 ± 0.009 Å |
| α | 90° |
| β | 92.36 ± 0.01° |
| γ | 90° |
| Cell volume | 2166 ± 3 Å3 |
| Cell temperature | 293 ± 2 K |
| Ambient diffraction temperature | 293 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 15 |
| Hermann-Mauguin space group symbol | C 1 2/c 1 |
| Hall space group symbol | -C 2yc |
| Residual factor for all reflections | 0.1449 |
| Residual factor for significantly intense reflections | 0.0653 |
| Weighted residual factors for all reflections | 0.2789 |
| Weighted residual factors for significantly intense reflections | 0.1948 |
| Goodness-of-fit parameter for all reflections | 0.609 |
| Goodness-of-fit parameter for significantly intense reflections | 0.563 |
| Diffraction radiation wavelength | 0.7107 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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