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Information card for entry 2005345
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Coordinates | 2005345.cif |
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Original IUCr paper | HTML |
Chemical name | Bis(η^5-trimethylsilylcyclopentadienyl)-diiodo-titanium(IV) |
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Formula | C16 H26 I2 Si2 Ti |
Calculated formula | C16 H26 I2 Si2 Ti |
SMILES | C[Si]([c]12[cH]3[Ti]4567892([cH]1[cH]4[cH]35)(I)(I)[cH]1[cH]6[cH]8[c]9([cH]71)[Si](C)(C)C)(C)C |
Title of publication | Diiodobis(η^5^-trimethylsilylcyclopentadienyl)titanium(IV) |
Authors of publication | Drew, M. G. B.; Delgado, E.; Hernandez, E.; Baker, P. K.; Mansilla, N. |
Journal of publication | Acta Crystallographica Section C |
Year of publication | 1996 |
Journal volume | 52 |
Journal issue | 9 |
Pages of publication | 2168 - 2170 |
a | 13.44 ± 0.009 Å |
b | 7.205 ± 0.009 Å |
c | 22.388 ± 0.009 Å |
α | 90° |
β | 92.36 ± 0.01° |
γ | 90° |
Cell volume | 2166 ± 3 Å3 |
Cell temperature | 293 ± 2 K |
Ambient diffraction temperature | 293 ± 2 K |
Number of distinct elements | 5 |
Space group number | 15 |
Hermann-Mauguin space group symbol | C 1 2/c 1 |
Hall space group symbol | -C 2yc |
Residual factor for all reflections | 0.1449 |
Residual factor for significantly intense reflections | 0.0653 |
Weighted residual factors for all reflections | 0.2789 |
Weighted residual factors for significantly intense reflections | 0.1948 |
Goodness-of-fit parameter for all reflections | 0.609 |
Goodness-of-fit parameter for significantly intense reflections | 0.563 |
Diffraction radiation wavelength | 0.7107 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/2005345.html
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