Information card for entry 2008015

Structure parameters

• Formula: C26 H56 Ag P Si3
• Calculated formula: C26 H56 Ag P Si3
• SMILES: [Ag]1234([P](CCCC)(CCCC)CCCC)[c]5([Si](C)(C)C)[cH]1[c]2([Si](C)(C)C)[c]3([Si](C)(C)C)[cH]45
• Title of publication: (Tributylphosphine-<i>P</i>)[1,2,4-tris(trimethylsilyl)cyclopentadienyl]silver(I)
• Authors of publication: Stammler, Hans-Georg; Jutzi, Peter; Wieland, Wolfram; Neumann, Beate
• Journal of publication: Acta Crystallographica Section C
• Year of publication: 1998
• Journal volume: 54
• Journal issue: 12
• Pages of publication: IUC9800064
• a: 9.848 ± 0.005 Å
• b: 17.539 ± 0.009 Å
• c: 21.95 ± 0.009 Å
• α: 111.06 ± 0.03°
• β: 92.19 ± 0.04°
• γ: 106.2 ± 0.04°
• Cell volume: 3357 ± 3 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.148
• Residual factor for significantly intense reflections: 0.064
• Weighted residual factors for all reflections: 0.125
• Weighted residual factors for significantly intense reflections: 0.082
• Goodness-of-fit parameter for all reflections: 1.211
• Goodness-of-fit parameter for significantly intense reflections: 1.38
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No