Information card for entry 2220006
| Chemical name |
(<i>Z</i>,<i>Z</i>)-1,4-Diiodo-1,4-bis(trimethylsilyl)buta-1,3-diene |
| Formula |
C10 H20 I2 Si2 |
| Calculated formula |
C10 H20 I2 Si2 |
| SMILES |
C(=C(\I)[Si](C)(C)C)\C=C(I)\[Si](C)(C)C |
| Title of publication |
(<i>Z</i>,<i>Z</i>)-1,4-Diiodo-1,4-bis(trimethylsilyl)buta-1,3-diene |
| Authors of publication |
Bats, Jan W.; Urschel, Birgit; Müller, Thomas |
| Journal of publication |
Acta Crystallographica Section E |
| Year of publication |
2008 |
| Journal volume |
64 |
| Journal issue |
11 |
| Pages of publication |
o2235 |
| a |
6.3553 ± 0.0017 Å |
| b |
11.502 ± 0.002 Å |
| c |
11.698 ± 0.002 Å |
| α |
103.027 ± 0.013° |
| β |
90.555 ± 0.017° |
| γ |
90.99 ± 0.02° |
| Cell volume |
832.9 ± 0.3 Å3 |
| Cell temperature |
155 ± 2 K |
| Ambient diffraction temperature |
155 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.025 |
| Residual factor for significantly intense reflections |
0.0211 |
| Weighted residual factors for significantly intense reflections |
0.0566 |
| Weighted residual factors for all reflections included in the refinement |
0.0585 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.034 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
Yes |
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The link is:
https://www.crystallography.net/2220006.html
