Information card for entry 4000176

Structure parameters

• Formula: Ga4.4 Ge0.6 Ho0.66 Ni2
• Calculated formula: Ga4.45 Ge0.54 Ho0.67 Ni2
• Journal of publication: Chemistry of Materials
• Year of publication: 2002
• a: 4.1491 ± 0.0004 Å
• b: 4.1491 ± 0.0004 Å
• c: 15.877 ± 0.002 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 236.71 ± 0.05 ų
• Cell temperature: 571 ± 2 K
• Ambient diffraction temperature: 571 ± 2 K
• Number of distinct elements: 4
• Space group number: 194
• Hermann-Mauguin space group symbol: P 63/m m c
• Hall space group symbol: -P 6c 2c
• Residual factor for all reflections: 0.0338
• Residual factor for significantly intense reflections: 0.0332
• Weighted residual factors for significantly intense reflections: 0.0846
• Weighted residual factors for all reflections included in the refinement: 0.0849
• Goodness-of-fit parameter for all reflections included in the refinement: 1.317
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No