Information card for entry 4000175

Structure parameters

• Formula: Ga4.56 Ge0.44 Ni2 Sm0.53
• Calculated formula: Ga4.79 Ge0.2 Ni2 Sm0.533
• Journal of publication: Chemistry of Materials
• Year of publication: 2002
• a: 4.1748 ± 0.0007 Å
• b: 4.1748 ± 0.0007 Å
• c: 16.007 ± 0.004 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 241.61 ± 0.08 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 4
• Space group number: 194
• Hermann-Mauguin space group symbol: P 63/m m c
• Hall space group symbol: -P 6c 2c
• Residual factor for all reflections: 0.032
• Residual factor for significantly intense reflections: 0.0311
• Weighted residual factors for significantly intense reflections: 0.0721
• Weighted residual factors for all reflections included in the refinement: 0.0724
• Goodness-of-fit parameter for all reflections included in the refinement: 1.164
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No