Information card for entry 4000981
| Common name |
C8-BSBS |
| Chemical name |
C8-BSBS |
| Formula |
C30 H40 Se2 |
| Calculated formula |
C30 H40 Se2 |
| SMILES |
CCCCCCCCc1ccc2c(c1)[se]c1c2[se]c2c1ccc(c2)CCCCCCCC |
| Title of publication |
Solution-Processible Organic Semiconductors Based on Selenophene-Containing Heteroarenes, 2,7-Dialkyl[1]benzoselenopheno[3,2-b][1]benzoselenophenes (Cn-BSBSs): Syntheses, Properties, Molecular Arrangements, and Field-Effect Transistor Characteristics |
| Authors of publication |
Izawa, Takafumi; Miyazaki, Eigo; Takimiya, Kazuo |
| Journal of publication |
Chemistry of Materials |
| Year of publication |
2009 |
| Journal volume |
21 |
| Journal issue |
5 |
| Pages of publication |
903 |
| a |
56.717 ± 0.006 Å |
| b |
4.1874 ± 0.0005 Å |
| c |
11.1892 ± 0.0011 Å |
| α |
90° |
| β |
94.912 ± 0.003° |
| γ |
90° |
| Cell volume |
2647.6 ± 0.5 Å3 |
| Cell temperature |
150 ± 2 K |
| Ambient diffraction temperature |
150 ± 2 K |
| Number of distinct elements |
3 |
| Space group number |
15 |
| Hermann-Mauguin space group symbol |
C 1 2/c 1 |
| Hall space group symbol |
-C 2yc |
| Residual factor for all reflections |
0.0886 |
| Residual factor for significantly intense reflections |
0.0706 |
| Weighted residual factors for significantly intense reflections |
0.1918 |
| Weighted residual factors for all reflections included in the refinement |
0.2167 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.065 |
| Diffraction radiation wavelength |
0.71075 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/4000981.html