Information card for entry 4001661

Structure parameters

• Formula: C24 H63 In N2 O3 Si4 Sn
• Calculated formula: C24 H63 In N2 O3 Si4 Sn
• SMILES: [In]1([O]([Sn]([O]1C(C)(C)C)OC(C)(C)C)C(C)(C)C)(N([Si](C)(C)C)[Si](C)(C)C)N([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Facile Molecular Approach to Transparent Thin-Film Field-Effect Transistors with High-Performance Using New Homo- and Heteroleptic Indium(III)‒Tin(II) Single-Source Precursors
• Authors of publication: Samedov, Kerim; Aksu, Yilmaz; Driess, Matthias
• Journal of publication: Chemistry of Materials
• Year of publication: 2012
• Journal volume: 24
• Journal issue: 11
• Pages of publication: 2078
• a: 11.1655 ± 0.0002 Å
• b: 20.1365 ± 0.0004 Å
• c: 33.784 ± 0.0006 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 7595.8 ± 0.2 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 7
• Space group number: 61
• Hermann-Mauguin space group symbol: P b c a
• Hall space group symbol: -P 2ac 2ab
• Residual factor for all reflections: 0.1001
• Residual factor for significantly intense reflections: 0.0608
• Weighted residual factors for significantly intense reflections: 0.0802
• Weighted residual factors for all reflections included in the refinement: 0.088
• Goodness-of-fit parameter for all reflections included in the refinement: 1.147
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No