Information card for entry 4001660

Structure parameters

• Formula: C24 H54 Cl7 In3 O8 Sn4
• Calculated formula: C24 H54 Cl7 In3 O8 Sn4
• SMILES: [Sn]12[O]34[Sn]([O]1C(C)(C)C)[O]([In]4(Cl)([Cl][In]1(Cl)(Cl)[Cl][In]4(Cl)[O]51[Sn]([O]([Sn]5[O]4C(C)(C)C)C(C)(C)C)[O]3C(C)(C)C)[O]2C(C)(C)C)C(C)(C)C.[Cl-]
• Title of publication: Facile Molecular Approach to Transparent Thin-Film Field-Effect Transistors with High-Performance Using New Homo- and Heteroleptic Indium(III)‒Tin(II) Single-Source Precursors
• Authors of publication: Samedov, Kerim; Aksu, Yilmaz; Driess, Matthias
• Journal of publication: Chemistry of Materials
• Year of publication: 2012
• Journal volume: 24
• Journal issue: 11
• Pages of publication: 2078
• a: 9.9965 ± 0.0001 Å
• b: 18.7645 ± 0.0002 Å
• c: 25.06 ± 0.0003 Å
• α: 90°
• β: 98.076 ± 0.001°
• γ: 90°
• Cell volume: 4654.12 ± 0.09 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0364
• Residual factor for significantly intense reflections: 0.0296
• Weighted residual factors for significantly intense reflections: 0.0551
• Weighted residual factors for all reflections included in the refinement: 0.0565
• Goodness-of-fit parameter for all reflections included in the refinement: 1.21
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No