Information card for entry 4001705
| Formula |
Cs2 Hg2 In2 S6 |
| Calculated formula |
Cs2 Hg2 In2 S6 |
| Title of publication |
CsHgInS3: a New Quaternary Semiconductor for γ-ray Detection |
| Authors of publication |
Li, Hao; Malliakas, Christos D.; Liu, Zhifu; Peters, John A.; Jin, Hosub; Morris, Collin D.; Zhao, Lidong; Wessels, Bruce W.; Freeman, Arthur J.; Kanatzidis, Mercouri G. |
| Journal of publication |
Chemistry of Materials |
| Year of publication |
2012 |
| Journal volume |
24 |
| Journal issue |
22 |
| Pages of publication |
4434 |
| a |
11.2503 ± 0.0006 Å |
| b |
11.2531 ± 0.0005 Å |
| c |
22.2884 ± 0.0014 Å |
| α |
90° |
| β |
97.26 ± 0.005° |
| γ |
90° |
| Cell volume |
2799.1 ± 0.3 Å3 |
| Cell temperature |
293 ± 2 K |
| Ambient diffraction temperature |
293 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
15 |
| Hermann-Mauguin space group symbol |
C 1 2/c 1 |
| Hall space group symbol |
-C 2yc |
| Residual factor for all reflections |
0.1371 |
| Residual factor for significantly intense reflections |
0.0777 |
| Weighted residual factors for significantly intense reflections |
0.1624 |
| Weighted residual factors for all reflections included in the refinement |
0.1852 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.125 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/4001705.html
