Information card for entry 4001805
| Formula |
Cs2 Ge3 Mg Se8 |
| Calculated formula |
Cs2 Ge3 Mg Se8 |
| Title of publication |
Cs2MIIMIV3Q8(Q = S, Se, Te): An Extensive Family of Layered Semiconductors with Diverse Band Gaps |
| Authors of publication |
Morris, Collin D.; Li, Hao; Jin, Hosub; Malliakas, Christos D.; Peters, John A.; Trikalitis, Pantelis N.; Freeman, Arthur J.; Wessels, Bruce W.; Kanatzidis, Mercouri G. |
| Journal of publication |
Chemistry of Materials |
| Year of publication |
2013 |
| Journal volume |
25 |
| Journal issue |
16 |
| Pages of publication |
3344 |
| a |
7.6635 ± 0.0002 Å |
| b |
12.7242 ± 0.0005 Å |
| c |
17.7724 ± 0.0006 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
1733.02 ± 0.1 Å3 |
| Cell temperature |
293 ± 2 K |
| Ambient diffraction temperature |
293 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
19 |
| Hermann-Mauguin space group symbol |
P 21 21 21 |
| Hall space group symbol |
P 2ac 2ab |
| Residual factor for all reflections |
0.0719 |
| Residual factor for significantly intense reflections |
0.0467 |
| Weighted residual factors for significantly intense reflections |
0.0771 |
| Weighted residual factors for all reflections included in the refinement |
0.0837 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.026 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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