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Information card for entry 4001806
Preview
Coordinates | 4001806.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | Cs2 Ge3 S8 Zn |
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Calculated formula | Cs2 Ge3 S8 Zn |
Title of publication | Cs2MIIMIV3Q8(Q = S, Se, Te): An Extensive Family of Layered Semiconductors with Diverse Band Gaps |
Authors of publication | Morris, Collin D.; Li, Hao; Jin, Hosub; Malliakas, Christos D.; Peters, John A.; Trikalitis, Pantelis N.; Freeman, Arthur J.; Wessels, Bruce W.; Kanatzidis, Mercouri G. |
Journal of publication | Chemistry of Materials |
Year of publication | 2013 |
Journal volume | 25 |
Journal issue | 16 |
Pages of publication | 3344 |
a | 7.2624 ± 0.0004 Å |
b | 16.9801 ± 0.0009 Å |
c | 12.6231 ± 0.0008 Å |
α | 90° |
β | 97.706 ± 0.005° |
γ | 90° |
Cell volume | 1542.58 ± 0.15 Å3 |
Cell temperature | 293 ± 2 K |
Ambient diffraction temperature | 293 ± 2 K |
Number of distinct elements | 4 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/n 1 |
Hall space group symbol | -P 2yn |
Residual factor for all reflections | 0.0514 |
Residual factor for significantly intense reflections | 0.0428 |
Weighted residual factors for significantly intense reflections | 0.1044 |
Weighted residual factors for all reflections included in the refinement | 0.1085 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.059 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/4001806.html
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