Information card for entry 4065858

Structure parameters

• Formula: C67 H100 N8 O6 Si4
• Calculated formula: C67 H100 N8 O6 Si4
• SMILES: C1(c2ccccc2)=[N](C(C)(C)C)[Si]23(N1C(C)(C)C)O[Si]14([N](C(C)(C)C)=C(c5ccccc5)N1C(C)(C)C)O[Si]1([N](C(C)(C)C)=C(c5ccccc5)N1C(C)(C)C)(O[Si]1([N](C(C)(C)C)=C(c5ccccc5)N1C(C)(C)C)(O2)O3)O4.c1(ccccc1)C
• Title of publication: Synthesis of a Stable Four-Membered Si2O2Ring and a Dimer with Two Four-Membered Si2O2Rings Bridged by Two Oxygen Atoms, with Five-Coordinate Silicon Atoms in Both Ring Systems
• Authors of publication: Sen, Sakya S.; Tavčar, Gašper; Roesky, Herbert W.; Kratzert, Daniel; Hey, Jakob; Stalke, Dietmar
• Journal of publication: Organometallics
• Year of publication: 2010
• Journal volume: 29
• Journal issue: 10
• Pages of publication: 2343
• a: 10.7264 ± 0.0016 Å
• b: 28.415 ± 0.004 Å
• c: 23.012 ± 0.003 Å
• α: 90°
• β: 101.979 ± 0.002°
• γ: 90°
• Cell volume: 6861.1 ± 1.7 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0635
• Residual factor for significantly intense reflections: 0.0422
• Weighted residual factors for significantly intense reflections: 0.094
• Weighted residual factors for all reflections included in the refinement: 0.1053
• Goodness-of-fit parameter for all reflections included in the refinement: 1.019
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No