Information card for entry 4066485

Structure parameters

• Formula: C70 H92 Ge2 Si2
• Calculated formula: C70 H92 Ge2 Si2
• SMILES: c1(c(cccc1c1c(cccc1C(C)C)C(C)C)c1c(C(C)C)cccc1C(C)C)[Ge](C#C[Si](C)(C)C)[Ge](c1c(cccc1c1c(cccc1C(C)C)C(C)C)c1c(cccc1C(C)C)C(C)C)C#C[Si](C)(C)C
• Title of publication: Synthesis and Structures of Low-Valent Alkynyl Tin and Germanium Complexes Supported by Terphenyl Ligands: Heavier Group 14 Element Enediyne Analogues†
• Authors of publication: Lei, Hao; Fettinger, James C.; Power, Philip P.
• Journal of publication: Organometallics
• Year of publication: 2010
• Journal volume: 29
• Journal issue: 21
• Pages of publication: 5585
• a: 12.4748 ± 0.0014 Å
• b: 12.5284 ± 0.0008 Å
• c: 12.7044 ± 0.0008 Å
• α: 115.848 ± 0.001°
• β: 98.232 ± 0.001°
• γ: 107.588 ± 0.001°
• Cell volume: 1613.5 ± 0.2 ų
• Cell temperature: 90 ± 2 K
• Ambient diffraction temperature: 90 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0381
• Residual factor for significantly intense reflections: 0.0302
• Weighted residual factors for significantly intense reflections: 0.0755
• Weighted residual factors for all reflections included in the refinement: 0.0776
• Goodness-of-fit parameter for all reflections included in the refinement: 1.024
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No