Information card for entry 4066704

Structure parameters

• Formula: C61.5 H70 N4 O4 Si2
• Calculated formula: C61.5 H70 N4 O4 Si2
• SMILES: C1(c2ccccc2)=[N](C(C)(C)C)[Si]2(N1C(C)(C)C)(OC(=C(c1ccccc1)O2)c1ccccc1)[Si]12([N](=C(c3ccccc3)N1C(C)(C)C)C(C)(C)C)OC(=C(c1ccccc1)O2)c1ccccc1.Cc1ccccc1
• Title of publication: Reactions of a Bis-silylene (LSi−SiL, L = PhC(NtBu)2) and a Heteroleptic Chloro Silylene (LSiCl) with Benzil: Formation of Bis(siladioxolene) and Monosiladioxolene Analogue with Five-Coordinate Silicon Atoms in Both Ring Systems
• Authors of publication: Tavčar, Gašper; Sen, Sakya S.; Roesky, Herbert W.; Hey, Jakob; Kratzert, Daniel; Stalke, Dietmar
• Journal of publication: Organometallics
• Year of publication: 2010
• Journal volume: 29
• Journal issue: 17
• Pages of publication: 3930
• a: 13.7468 ± 0.0018 Å
• b: 21.681 ± 0.003 Å
• c: 19.78 ± 0.003 Å
• α: 90°
• β: 109.503 ± 0.002°
• γ: 90°
• Cell volume: 5557.1 ± 1.4 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.054
• Residual factor for significantly intense reflections: 0.045
• Weighted residual factors for significantly intense reflections: 0.1079
• Weighted residual factors for all reflections included in the refinement: 0.1142
• Goodness-of-fit parameter for all reflections included in the refinement: 1.05
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No