Information card for entry 4066935

Structure parameters

• Formula: C28 H80 Si12
• Calculated formula: C28 H80 Si12
• SMILES: C([Si]1(C[Si]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)C[Si](C1)([Si](C)(C)C)[Si](C)(C)C)[Si]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Synthesis and Characterization of {[Tris(trimethylsilyl)silyl]methyl}silanes of the Formula Type Me4−nSi[CH2Si(SiMe3)3]n(n= 1−3) and Derivatives
• Authors of publication: Berkefeld, André; Troegel, Dennis; Burschka, Christian; Tacke, Reinhold
• Journal of publication: Organometallics
• Year of publication: 2010
• Journal volume: 29
• Journal issue: 20
• Pages of publication: 4548
• a: 19.2212 ± 0.0015 Å
• b: 26.902 ± 0.002 Å
• c: 19.271 ± 0.0014 Å
• α: 90°
• β: 95.416 ± 0.004°
• γ: 90°
• Cell volume: 9920.3 ± 1.3 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 3
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.057
• Residual factor for significantly intense reflections: 0.0334
• Weighted residual factors for significantly intense reflections: 0.0795
• Weighted residual factors for all reflections included in the refinement: 0.0946
• Goodness-of-fit parameter for all reflections included in the refinement: 1.061
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No