Information card for entry 4070517

Structure parameters

• Formula: C55 H42 O6 P2 Ru3 S0 Se4
• Calculated formula: C55 H42 O6 P2 Ru3 Se4
• SMILES: [P]1(c2ccccc2)(C[P](c2ccccc2)(c2ccccc2)[Ru]23(C#[O])(C#[O])[Se]4[Ru](c5ccccc5)(C#[O])(C#[O])([Se]2c2ccccc2)[Se](c2ccccc2)[Ru]14(C#[O])(C#[O])[Se]3c1ccccc1)c1ccccc1
• Title of publication: Facile E−E and E−C Bond Activation of PhEEPh (E = Te, Se, S) by Ruthenium Carbonyl Clusters: Formation of Di- and Triruthenium Complexes Bearing Bridging dppm and Phenylchalcogenide and Capping Chalcogenido Ligands
• Authors of publication: Begum, Noorjahan; Hyder, Md. Iqbal; Hassan, Mohammad R.; Kabir, Shariff E.; Bennett, Dennis W.; Haworth, Daniel T.; Siddiquee, Tasneem A.; Rokhsana, Dalia; Sharmin, Ayesha; Rosenberg, Edward
• Journal of publication: Organometallics
• Year of publication: 2008
• Journal volume: 27
• Journal issue: 7
• Pages of publication: 1550
• a: 13.103 ± 0.002 Å
• b: 13.604 ± 0.002 Å
• c: 17.044 ± 0.003 Å
• α: 95.79 ± 0.01°
• β: 93.41 ± 0.01°
• γ: 115.75 ± 0.01°
• Cell volume: 2704.3 ± 0.8 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 7
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0809
• Residual factor for significantly intense reflections: 0.0466
• Weighted residual factors for significantly intense reflections: 0.1037
• Weighted residual factors for all reflections included in the refinement: 0.1195
• Goodness-of-fit parameter for all reflections included in the refinement: 1.047
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No