Information card for entry 4070785

Structure parameters

• Formula: C26 H52 O Si4
• Calculated formula: C26 H52 O Si4
• SMILES: [Si@]1([Si](C)(C)C)(O[Si](C)(C)C)C(=C[C@@]1([Si](C)(C)C)C12CC3CC(CC(C3)C1)C2)C(C)(C)C.[Si@@]1([Si](C)(C)C)(O[Si](C)(C)C)C(=C[C@]1([Si](C)(C)C)C12CC3CC(CC(C3)C1)C2)C(C)(C)C
• Title of publication: Silicon−Carbon Unsaturated Compounds. 74. Thermal Behavior of 1-Silacyclobut-3-enes Generated from the Reaction of Acylpolysilanes withtert-Butylacetylene
• Authors of publication: Naka, Akinobu; Motoike, Shingo; Senba, Norihito; Ohshita, Joji; Kunai, Atsutaka; Yoshizawa, Kazunari; Ishikawa, Mitsuo
• Journal of publication: Organometallics
• Year of publication: 2008
• Journal volume: 27
• Journal issue: 12
• Pages of publication: 2750
• a: 10.0468 ± 0.0005 Å
• b: 10.3024 ± 0.0004 Å
• c: 17.0558 ± 0.0005 Å
• α: 104.11 ± 0.001°
• β: 94.399 ± 0.002°
• γ: 115.674 ± 0.0008°
• Cell volume: 1509.15 ± 0.11 ų
• Cell temperature: 296.2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for significantly intense reflections: 0.0405
• Weighted residual factors for all reflections included in the refinement: 0.1147
• Goodness-of-fit parameter for all reflections included in the refinement: 1.774
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No